Title :
Low-frequency noise in GaAs and InP Schottky diodes
Author :
Sato, K.F. ; Chan, C.W. ; Najita, K. ; DeLisio, M.P. ; Chung, Y.H. ; Cowles, J. ; Grossman, P.C. ; Lai, R. ; Oki, A.K. ; Streit, D.C. ; Wang, H.
Author_Institution :
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
Abstract :
This paper examines the low-frequency noise properties of millimeter-wave GaAs and InP Schottky diodes. Measurements of diodes fabricated using both HEMT and HBT epitaxy will be presented. These noise measurements should enable the development of accurate models useful in the analysis and design of MMIC components.
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; indium compounds; millimetre wave diodes; semiconductor device noise; GaAs; HBT epitaxy; HEMT epitaxy; InP; low-frequency noise; millimeter-wave Schottky diode; Epitaxial growth; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Low-frequency noise; Millimeter wave measurements; Noise measurement; Schottky diodes; Semiconductor process modeling;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700706
