DocumentCode
3063081
Title
The control of pattern distortion and drift in epitaxial layer
Author
Li, Yangxian ; Liu, Caichi ; Ju, Yulin ; Niu, Pingjuan
Author_Institution
Inst. of Semicond. Mater., Hebei Univ. of Technol., Tianjin, China
fYear
1998
fDate
1998
Firstpage
139
Lastpage
140
Abstract
The orientation deviation is the main factor influencing pattern distortion in epitaxial buried layers on p-type ⟨100⟩ silicon substrate. It is pointed out that better patterns can be obtained by deviating the orientation of the p-type ⟨100⟩ wafer 2°~3° from the ⟨100⟩ axis toward the nearest ⟨110⟩ axis. This is somewhat different from the commonly adopted epitaxial growth condition
Keywords
buried layers; crystal orientation; elemental semiconductors; semiconductor growth; silicon; vapour phase epitaxial growth; Si; epitaxial buried layers; epitaxial layer; orientation deviation; p-type ⟨100⟩ silicon substrate; pattern distortion; pattern drift; Bonding; Conductivity; Contracts; Epitaxial growth; Epitaxial layers; Production; Semiconductor devices; Semiconductor materials; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785825
Filename
785825
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