• DocumentCode
    3063090
  • Title

    Breakthrough to the “Silicon limit” of power devices

  • Author

    Chen, Xing Bi

  • Author_Institution
    Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art
  • Keywords
    power integrated circuits; power semiconductor devices; semiconductor device breakdown; figure of merit; lateral power devices; vertical power devices; voltage sustaining structures; Art; Bipolar transistors; Bismuth; Breakdown voltage; Current density; Doping; Electron mobility; Paper technology; Permittivity; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785827
  • Filename
    785827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063090