Title :
Breakthrough to the “Silicon limit” of power devices
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art
Keywords :
power integrated circuits; power semiconductor devices; semiconductor device breakdown; figure of merit; lateral power devices; vertical power devices; voltage sustaining structures; Art; Bipolar transistors; Bismuth; Breakdown voltage; Current density; Doping; Electron mobility; Paper technology; Permittivity; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785827
