DocumentCode
3063137
Title
Pattern design optimizing for GAT type power bipolar transistors
Author
Baowei, Kang ; Zhe, Wang ; Yu, Wu ; Xu, Cheng
Author_Institution
Dept. of Electron. Eng., Beijing Polytech. Univ., China
fYear
1998
fDate
1998
Firstpage
149
Lastpage
151
Abstract
In this paper, the experimental results of planar pattern design optimizing aimed at current rating improvement for GAT type high-voltage high-speed power bipolar transistors are reported. These results show that the presently proposed pattern design with the base and emitter stripes intersected, obliquely and the base contacts arranged in island arrays is superior to that published by the inventor of GAT. The current rating is improved by 80%, while the switching fall time is reduced by 1/4
Keywords
power bipolar transistors; power semiconductor switches; shielding; GAT type; base contacts; base stripes; current rating improvement; emitter stripes; high-speed devices; high-voltage devices; island arrays; pattern design optimizing; power bipolar transistors; switching fall time; Bipolar transistors; Costs; Current measurement; Design optimization; Gain measurement; Power electronics; Power engineering and energy; Power transistors; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785832
Filename
785832
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