DocumentCode
3063149
Title
A study of EOS failures in power IGBT modules
Author
Wu, Wuchen ; Wu, Li ; Zhang, Hua ; Dong, Lmin ; Jacob, Peter ; Held, Marcel
Author_Institution
Dept. of Electron. Eng., Beijing Polytech. Univ., China
fYear
1998
fDate
1998
Firstpage
152
Lastpage
155
Abstract
The influences of electrical overstress (EOS) on the reliability of power-insulated gate bipolar transistor (IGBT) modules were investigated by switching, frequency, and blocking tests. This paper reports the test results and the failure analysis results. Some conclusions, from the point of IGBT application reliability view, are also provided in this paper
Keywords
electrostatic discharge; failure analysis; insulated gate bipolar transistors; power bipolar transistors; semiconductor device reliability; semiconductor device testing; EOS failures; blocking tests; electrical overstress; failure analysis; frequency tests; power IGBT modules; reliability; switching tests; Circuit testing; Diodes; Earth Observing System; Electronic equipment testing; Failure analysis; Frequency; Insulated gate bipolar transistors; Leg; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785833
Filename
785833
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