The generation and influence of trapped charges in FLOTOX EEPROM tunnel oxide under various erase/write conditions

Author

Zongguang, Yu ; Zheng, Xu ; Shouyin, Ye ; Wei, Huang ; Wanye, Wang

Author_Institution

Central Res. Inst., Huajing Electron. Group Corp., China

fYear

1998

fDate

1998

Firstpage

168

Lastpage

171

Abstract

In this paper, the influences of trapped charges on the oxide injection field and the threshold voltage of the FLOTOX EEPROM memory transistor are studied theoretically. The relations of the threshold voltage of the FLOTOX EEPROM to the erase/write cycles under various erase/write conditions are studied experimentally, and then the generation of the trapped charges in the repeated erase/write operations is analyzed. For the low erase/write voltages, the erased threshold decreases, so negative trapped charge is generated; for the higher erase/write voltage, the erased threshold increases, so positive trapped charge is generated. The results fit in with the dynamic model of trapping-detrapping in SiO₂

Keywords

CMOS memory circuits; EPROM; MOSFET; electron traps; FLOTOX EEPROM memory transistor; Si-SiO₂; dynamic model; erase/write conditions; oxide injection field; repeated erase/write operations; threshold voltage; trapped charges; trapping-detrapping; tunnel oxide; Capacitance; Degradation; EPROM; Electron traps; Erbium; Low voltage; Nonvolatile memory; Permittivity; Threshold voltage; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785841

Filename

785841