Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy

Author

Zhongli, Liu ; Zhijing, He ; Fang, Yu ; Jiping, Nie ; Yuanhuan, Yu

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

fYear

1998

fDate

1998

Firstpage

191

Lastpage

194

Abstract

CMOS/SOS devices have lower carrier mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly result from the defects in the heteroepitaxial silicon film, especially from the defects near the Si-sapphire interface. This paper describes an experimental study of the improvement in CMOS/SOS devices characteristics resulting from improved epitaxial silicon quality which is obtained by modified solid phase epitaxy

Keywords

CMOS integrated circuits; carrier mobility; integrated circuit technology; leakage currents; semiconductor growth; silicon-on-insulator; solid phase epitaxial growth; CMOS/SOS devices; SOS-CMOS devices; SPE growth; Si-Al₂O₃; Si-sapphire interface; carrier mobility; channel leakage current; device characteristics improvement; epitaxial Si quality improvement; modified solid phase epitaxy; Annealing; Crystallization; Epitaxial growth; Helium; Ion implantation; Leakage current; Semiconductor films; Silicon; Solids; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785850

Filename

785850