DocumentCode
3063363
Title
An advanced structural deep-submicron MOS device
Author
Yibing, Zhao ; Laihui ; Zhizheng, Liu ; Dexin, Wu
Author_Institution
Microelectron. R&D Center, Acad. Sinica, Beijing, China
fYear
1998
fDate
1998
Firstpage
195
Lastpage
197
Abstract
An advanced structural deep sub-micron MOS device was presented and fabricated based on conventional photolithography equipment and novel side-wall technique. The effective channel length of 0.2 μm could be reached. The transconductances of the optimized devices were 125 and 80 mS/mm for n-MOSFET and p-MOSFET respectively. The breakthrough voltages were 10 and 11 volt respectively for n-MOSFET and p-MOSFET
Keywords
CMOS integrated circuits; MOSFET; VLSI; integrated circuit technology; photolithography; 0.2 micron; 125 mS/mm; 80 mS/mm; CMOS VLSI; CMOSFETs; NMOSFET; PMOSFET; advanced structural MOS device; conventional photolithography equipment; deep-submicron MOS device; effective channel length; n-MOSFET; p-MOSFET; side-wall technique; transconductances; Equations; Fabrication; Lithography; MOS devices; MOSFET circuits; Microelectronics; Oxidation; Resistors; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785851
Filename
785851
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