Electromigration mechanisms in Cu lines

Author

Hu, C.-K. ; Rosenberg, R.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1998

fDate

1998

Firstpage

242

Abstract

Summary form only given. The electromigration in 0.15 μm to 10 μm wide and 0.3 μm thick Cu lines deposited by physical vapor deposition has been investigated using both resistance and edge displacement techniques in the sample temperature range 225°C-405°C. For wide polycrystalline lines (>1 μm), the dominant diffusion mechanism is a mixture of grain boundary and surface diffusion, while in narrow lines (< 1 μm) the dominant mechanism is surface transport. The electromigration lifetime of fine Cu lines is estimated

Keywords

copper; electromigration; grain boundary diffusion; integrated circuit interconnections; integrated circuit metallisation; life testing; metallic thin films; surface diffusion; vapour deposited coatings; 0.15 to 10 mum; 225 to 405 C; Cu; Cu lines; diffusion mechanism; edge displacement; electromigration lifetime; electromigration mechanisms; grain boundary diffusion; narrow lines; physical vapor deposition; resistance; surface diffusion; surface transport; wide polycrystalline lines; Artificial intelligence; Capacitance; Conductivity; Copper; Delay lines; Electromigration; Integrated circuit interconnections; Metallization; Surface resistance; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785864

Filename

785864