The influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

Author

Chen, L.J. ; Cheng, S.L. ; Luo, H.M. ; Huang, H.Y. ; Peng, Y.C. ; Tsui, B.Y. ; Tsai, C.J. ; Guo, S.S.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

1998

fDate

1998

Firstpage

256

Lastpage

259

Abstract

The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi₂ and TiSi₂ films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films

Keywords

chemical interdiffusion; elemental semiconductors; internal stresses; nickel compounds; plasma CVD coatings; rapid thermal annealing; semiconductor-metal boundaries; silicon; titanium compounds; NiSi-Si; PECVD; Si; Si(001) substrates; TiSi₂-Si; compressive stress; diffusion; film thickness; rapid thermal annealing; silicide thin films; tensile stress; Compressive stress; Electrons; Optical films; Rapid thermal annealing; Silicides; Silicon; Stress measurement; Substrates; Tensile stress; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785868

Filename

785868