Silicon nitride gate dielectric for advanced technology

Author

Tseng, Hsing-Huang

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1998

fDate

1998

Firstpage

279

Lastpage

282

Abstract

The increase in gate leakage current and boron penetration are major problems for scaled conventional gate oxides in advanced technology. Approaches to minimize the problems are reviewed. Jet vapor deposition (JVD) nitride used as a gate dielectric in an advanced CMOS process is addressed. We have demonstrated a reduction in gate leakage current and strong resistance to boron penetration when JVD nitride is used. In addition, JVD nitride provides a robust interface and well behaved bulk properties, MOSFET characteristics and ring oscillator performance. The demonstration of JVD nitride as an attractive gate dielectric would provide a paradigm shift for future gate dielectric research

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; leakage currents; silicon compounds; vapour deposition; MOSFET characteristics; SiN-Si; advanced CMOS process; boron penetration; jet vapor deposition; leakage current; nitride gate dielectric; ring oscillator; robust interface; Boron; CMOS process; CMOS technology; Chemical vapor deposition; Dielectrics; Leakage current; MOSFET circuits; Ring oscillators; Robustness; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785874

Filename

785874