Title :
Silicon nitride gate dielectric for advanced technology
Author :
Tseng, Hsing-Huang
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
The increase in gate leakage current and boron penetration are major problems for scaled conventional gate oxides in advanced technology. Approaches to minimize the problems are reviewed. Jet vapor deposition (JVD) nitride used as a gate dielectric in an advanced CMOS process is addressed. We have demonstrated a reduction in gate leakage current and strong resistance to boron penetration when JVD nitride is used. In addition, JVD nitride provides a robust interface and well behaved bulk properties, MOSFET characteristics and ring oscillator performance. The demonstration of JVD nitride as an attractive gate dielectric would provide a paradigm shift for future gate dielectric research
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; leakage currents; silicon compounds; vapour deposition; MOSFET characteristics; SiN-Si; advanced CMOS process; boron penetration; jet vapor deposition; leakage current; nitride gate dielectric; ring oscillator; robust interface; Boron; CMOS process; CMOS technology; Chemical vapor deposition; Dielectrics; Leakage current; MOSFET circuits; Ring oscillators; Robustness; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785874
