Mobility and oxide breakdown behavior in ultra-thin oxide with atomically smooth interface

Author

Cheng, Y.C. ; Chen, W.J. ; Lin, B.C. ; Tsai, C. ; Chin, Albert

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1998

fDate

1998

Firstpage

283

Lastpage

286

Abstract

The device performance made by thin gate oxide is related to the oxide thickness uniformity and the interface smoothness. Unfortunately, the native oxide roughens the initial surface before thermal oxidation. In this paper, we have designed a leak-tight low-pressure N₂O oxidation system, and the native oxide is desorbed in-situ under H₂ environment. Atomically smooth oxide and Si interface of ultra-thin oxides (11-38 Å) were achieved as observed by high-resolution TEM. Significant mobility enhancement over large gate field is obtained by reducing interface roughness scattering. The oxide reliability is also improved by this smoother interface between Si and oxide

Keywords

electric breakdown; electron mobility; elemental semiconductors; interface roughness; oxidation; silicon; silicon compounds; transmission electron microscopy; H₂ environment; Si; SiO₂-Si; atomically smooth interface; high-resolution TEM; interface roughness scattering; interface smoothness; mobility enhancement; oxide breakdown; oxide reliability; thermal oxidation; thickness uniformity; ultra-thin oxide; Atomic measurements; CMOS technology; Cleaning; Electric breakdown; Electron mobility; Hydrogen; Oxidation; Rough surfaces; Scattering; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785875

Filename

785875