• DocumentCode
    3063881
  • Title

    Charge-to-breakdown (QBD): a method to monitor the ultrathin tunnel oxide in E2PROM

  • Author

    Bin, Zhao Wen ; Ming, Xiao ; Zheng, Xu ; Kang, Zhang An

  • Author_Institution
    208 Post Box PC214035, Wuxu, China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    287
  • Lastpage
    290
  • Abstract
    The dielectric reliability of the thin tunnel oxide film has been characterized and monitored by using the constant-current-stressed QBD test. Charge trapping in the tunnel oxide is an intrinsic failure mechanism associated with E2PROM, QBD testing method is described. High performance E2PROM devices were fabricated using 8 nm tunnel oxide with QBD>5C/cm2, excellent W/E endurance over one million cycles was acquired
  • Keywords
    EPROM; dielectric thin films; electric breakdown; electron traps; elemental semiconductors; reliability; silicon; silicon compounds; Si-SiO2; charge trapping; charge-to-breakdown; constant-current-stress test; dielectric reliability; high performance E2PROM devices; thin tunnel oxide film; ultrathin tunnel oxide; Current density; Design for quality; Dielectric thin films; Electrons; MOS capacitors; Monitoring; Nonvolatile memory; PROM; Substrates; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785876
  • Filename
    785876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063881