• DocumentCode
    3063905
  • Title

    Dependence of ultra-thin gate oxide reliability on surface cleaning approach

  • Author

    Wenyu, Gao ; Zhongli, Liu ; Zhijing, He

  • Author_Institution
    Inst. of Semicond., Acad. Sinica, Beijing, China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    291
  • Lastpage
    294
  • Abstract
    In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H2SO4 /H2O2(SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides
  • Keywords
    MOS capacitors; elemental semiconductors; oxidation; reliability; silicon; silicon compounds; surface cleaning; H2O2; H2SO4; Si; SiO2-Si; hot-carrier immunity; oxidation; oxide integrity; reliability; surface cleaning; ultra-thin gate oxide; Chemicals; Ethanol; Hafnium; Hot carriers; MOS capacitors; Oxidation; Scanning probe microscopy; Silicon; Surface cleaning; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785877
  • Filename
    785877
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063905