Title :
A reliability analysis tool of small dimension MOS device based on relaxation spectroscopy technique
Author :
Wei, Jianlin ; Liang, Yi ; Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this paper, we introduce a new kind of reliability analyzing tool. It is developed from our research results on MOS devices-“relaxation spectroscopy technique”. The technology can separate multiple traps quickly and precisely, and provide enough parameters for degradation analysis
Keywords :
MIS devices; ULSI; electron traps; semiconductor device reliability; degradation; multiple traps; relaxation spectroscopy; reliability analysis; small dimension MOS device; Character generation; Current measurement; Decision support systems; Degradation; MOS devices; Oxidation; Spectroscopy; Stress; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785879
