• DocumentCode
    3063959
  • Title

    Experimental and theoretical study on digital-alloy In(Ga1−zAlz)As structure

  • Author

    Duchang Heo ; Song, J.D. ; Han, I.K. ; Yang, Kun ; Kim, Jung-Ho ; Jeon, Sanggeun

  • Author_Institution
    Korea Electrotechnol. Res. Inst., Ansan, South Korea
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    To fully understand optical properties of digital-alloy (InGaAs)1-z(InAlAs)z grown on InP by MBE, we theoretically calculate the emission energies of digital-alloy (InGaAs)1-z(InAlAs)z using 4×4 k·p Hamiltonian and compare them with photoluminescence data.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; k.p calculations; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; In(Ga1-zAlz)As; InP; MBE; digital-alloy structure; emission energies; k·p Hamiltonian; optical properties; Digital alloys; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical superlattices; Quantum well devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600431
  • Filename
    6600431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063959