The effect of radiation defects on oxygen diffusion in NTDCZSi

Author

Yangxian, Li ; Niu Pingjuan ; Caichi, Liu ; Yulin, Ju

Author_Institution

Inst. of Semicond. Mater., Hebei Univ. of Technol., China

fYear

1998

fDate

1998

Firstpage

339

Lastpage

340

Abstract

The behavior of oxygen diffusion in heat-treated NTDCZSi is very complicated because of the effect of defects induced by irradiation. The oxygen outdiffusion in NTDCZSi has been investigated by means of TCSR. The result shows that oxygen diffusion within silicon is significantly enhanced at 1100°C. At high temperature, a great deal of the interstitial-type defect clusters are very stable while the vacancy-type defect clusters are almost solved. The vacancies in silicon will accelerated oxygen diffusion. It supports a vacancy-dominant diffusion mechanism for oxygen at the temperature studied

Keywords

crystal growth from melt; diffusion; elemental semiconductors; neutron effects; semiconductor growth; silicon; 1100 C; NTDCZSi; Si:O; interstitial-type defect clusters; neutron transmutation doping Czochralski growth; outdiffusion; oxygen diffusion; radiation defects; vacancy-type defect clusters; Acceleration; Annealing; Equations; Neutrons; Oxygen; Petroleum; Semiconductor materials; Silicon; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785890

Filename

785890