Gettering of metal impurities in silicon by fast neutron irradiation

Author

Caichi, Liu ; Yangxian, Li

Author_Institution

Mater. Res. Center, Hebei Univ. of Technol., China

fYear

1998

fDate

1998

Firstpage

341

Lastpage

343

Abstract

Some irradiated defects were introduced into p-type CZ Si by fast-neutron irradiation, they interact with oxygen in CZ Si during high temperature annealing, enhance the oxygen out-diffusion on the wafer surface and promote the precipitation of oxygen in the silicon bulk. Utilizing the combination of fast-neutron irradiation and intrinsic gettering (IG), a new excellent gettering technology only with one-step high temperature heat-treatment was invented, instead of multistep processing in conventional IG technology. With our new gettering technology, the metal impurities (Fe,Ni) on the surface of p-type <111>-oriented CZSi wafers was efficiently inhibited

Keywords

annealing; elemental semiconductors; getters; iron; neutron effects; nickel; oxygen; precipitation; silicon; surface contamination; Fe; Ni; Si:O,Fe,Ni; fast neutron irradiation; gettering; high temperature annealing; intrinsic gettering; irradiated defects; metal impurities; one-step high temperature heat-treatment; oxygen; oxygen out-diffusion; p-type <111>-oriented CZ Si wafers; p-type CZ Si; precipitation; silicon; surface; Annealing; Chemical analysis; Etching; Gettering; Impurities; Neutrons; Silicides; Silicon; Surface treatment; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785891

Filename

785891