Temperature influence on Hall effect sensors characteristics

Author

Cholakova, I.N. ; Takov, T.B. ; Tsankov, R.T. ; Simonne, N.

Author_Institution

Fac. of Electron. Eng. & Technol., Tech. Univ. of Sofia, Sofia, Bulgaria

fYear

2012

fDate

20-22 Nov. 2012

Firstpage

967

Lastpage

970

Abstract

Horizontal Hall microsensors, comprising a silicon substrate and four contacts, providing two supply inputs and two differential outputs, are designed and characterized. This paper presents the temperature influence on the residual offset and also on the voltage related sensitivities. The measured voltage related sensitivity is 152 mV/VT. The sensors are tested at 125°C, 85°C, 50°C, 25°C, 0°C, -20°C and -40°C. An offset compensation method is used in order to achieve residual offset in the micro scale (the highest achieved value offset is 6.97 μV).

Keywords

Hall effect transducers; compensation; electrical contacts; microsensors; sensitivity; CMOS technology; Hall effect sensor characteristics; Si; contacts; differential outputs; horizontal Hall microsensors; offset compensation method; residual offset; silicon substrate; size 0.18 mum; supply inputs; temperature -20 degC; temperature -40 degC; temperature 0 degC; temperature 125 degC; temperature 25 degC; temperature 50 degC; temperature 85 degC; temperature influence; voltage related sensitivity; Magnetic sensors; Semiconductor device measurement; Sensitivity; Temperature measurement; Temperature sensors; Voltage measurement; 0.18μm CMOS technology; Hall microsensors; offset; sensitivities; temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Forum (TELFOR), 2012 20th

Conference_Location

Belgrade

Print_ISBN

978-1-4673-2983-5

Type

conf

DOI

10.1109/TELFOR.2012.6419370

Filename

6419370