DocumentCode
3064632
Title
The development of deep sub micrometer semiconductor device simulation based on the CORBA platform
Author
Lianfeng, Yang ; Jin, Wu ; Nasirjan ; Tongli, Wei
Author_Institution
Microelectron. Center, Southeast Univ., Nanjing, China
fYear
1998
fDate
1998
Firstpage
443
Lastpage
446
Abstract
This paper has discussed the designs of general deep sub micrometer semiconductor device simulation software based on the proposed object model of drift diffusion. Because of the properties of object-oriented design, it is easy to add models and methods into the existent system. Thus, a network distributed calculation model based on the CORBA platform can be realized on the basis of this object model. Using CORBA technology, we can make full use of the existent network resources to solve the problems of the calculation scale and speed in device simulation by parallel calculation
Keywords
digital simulation; electronic engineering computing; finite difference methods; object-oriented methods; parallel algorithms; partial differential equations; semiconductor device models; CORBA platform; deep submicron semiconductor device simulation; device simulation; drift diffusion model; network distributed calculation model; object model; object-oriented design; simulation software; Distributed decision making; Encapsulation; Hardware; Object oriented modeling; Poisson equations; Predictive models; Semiconductor devices; Software design; Software systems; Standards organizations;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785917
Filename
785917
Link To Document