Title :
A new model for EEPROM cell
Author_Institution :
Dept. of Electr. Eng., Fudan Univ., Shanghai, China
Abstract :
A new model is presented for an EEPROM cell using devices existing in most simulators. Transient simulation can be performed with this model when the EEPROM cells perform erase, write and read operations. The compatibility has been verified by the examples in this paper
Keywords :
CMOS memory circuits; EPROM; equivalent circuits; integrated circuit modelling; semiconductor device models; transient analysis; EEPROM cell model; erase operation; read operation; transient simulation; write operation; Breakdown voltage; Capacitors; Coupling circuits; EPROM; Electric breakdown; Equivalent circuits; MOSFETs; Nonvolatile memory; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785920
