Title :
Multi-level p-channel flash memory
Author :
Lin, F.R.-L. ; Wang, Yen-Sen ; Hsu, C.C.-H.
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Recently multilevel flash memory has attracted many developers´ attentions. P-channel flash memory has been found to be a promising candidate due to the low-voltage and low-power programming and the ease of scaling-down. Two programming mechanisms: (a) Channel Hot Hole Induced Hot Electron (CHHIHE), and (b) Band-To-Band Tunneling Induced Hot Electron (BTBTIHE) can be used as a high efficient programming method in p-channel rather than in n-channel flash memory. Based upon CHHIHE and BTBTIHE programming, the multilevel applications and analysis of p-channel flash memory are presented. Different engineering guidelines are given for these two programming techniques
Keywords :
PLD programming; flash memories; hot carriers; integrated memory circuits; tunnelling; band-to-band tunneling induced hot electron type; channel hot hole induced hot electron type; low-power programming; low-voltage programming; multilevel flash memory; p-channel flash memory; programming mechanisms; Charge carrier processes; Electrons; Flash memory; Hot carriers; Kinetic energy; Low voltage; Nonvolatile memory; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785921
