Title :
Simulation and transient analysis of organic/inorganic CMOS inverter circuit
Author :
Satyala, Nikhil ; Pieper, Ron ; Wondmagegn, Wudyalew
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Tyler, Tyler, TX
Abstract :
Finite element device level simulations were used in conjunction with SPICE modeling to design and optimize a complementary MOS inverter circuit with an organic p-type and an inorganic n-type transistor combination. The device characteristics of the p-type and the n-type transistors were generated through 2D finite element device level simulations. The drain current (ID) vs. drain-source voltage (VD) and the drain current (ID) vs. gate voltage (VG) characteristics were modeled through fitting procedures to extract the SPICE parameters. Also, the design and transient analysis of a hybrid CMOS inverter circuit modeled using these SPICE parameters is presented. The inverter works reliably within the range of supply voltage (10 V).
Keywords :
CMOS integrated circuits; SPICE; circuit simulation; integrated circuit design; invertors; transient analysis; 2D finite element device level simulation; SPICE modeling; drain current; drain-source voltage; gate voltage; inorganic n-type transistor; organic p-type; organic-inorganic CMOS inverter circuit; transient analysis; Analytical models; Circuit simulation; Design optimization; Finite element methods; Inverters; MOSFETs; SPICE; Semiconductor device modeling; Transient analysis; Voltage; Computer Aided Design; Modeling and Simulation; Systems Engineering;
Conference_Titel :
System Theory, 2009. SSST 2009. 41st Southeastern Symposium on
Conference_Location :
Tullahoma, TN
Print_ISBN :
978-1-4244-3324-7
Electronic_ISBN :
0094-2898
DOI :
10.1109/SSST.2009.4806847
