Simulation and transient analysis of organic/inorganic CMOS inverter circuit

Author

Satyala, Nikhil ; Pieper, Ron ; Wondmagegn, Wudyalew

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Tyler, Tyler, TX

fYear

2009

fDate

15-17 March 2009

Firstpage

324

Lastpage

329

Abstract

Finite element device level simulations were used in conjunction with SPICE modeling to design and optimize a complementary MOS inverter circuit with an organic p-type and an inorganic n-type transistor combination. The device characteristics of the p-type and the n-type transistors were generated through 2D finite element device level simulations. The drain current (I_D) vs. drain-source voltage (V_D) and the drain current (I_D) vs. gate voltage (V_G) characteristics were modeled through fitting procedures to extract the SPICE parameters. Also, the design and transient analysis of a hybrid CMOS inverter circuit modeled using these SPICE parameters is presented. The inverter works reliably within the range of supply voltage (10 V).

Keywords

CMOS integrated circuits; SPICE; circuit simulation; integrated circuit design; invertors; transient analysis; 2D finite element device level simulation; SPICE modeling; drain current; drain-source voltage; gate voltage; inorganic n-type transistor; organic p-type; organic-inorganic CMOS inverter circuit; transient analysis; Analytical models; Circuit simulation; Design optimization; Finite element methods; Inverters; MOSFETs; SPICE; Semiconductor device modeling; Transient analysis; Voltage; Computer Aided Design; Modeling and Simulation; Systems Engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 2009. SSST 2009. 41st Southeastern Symposium on

Conference_Location

Tullahoma, TN

ISSN

0094-2898

Print_ISBN

978-1-4244-3324-7

Electronic_ISBN

0094-2898

Type

conf

DOI

10.1109/SSST.2009.4806847

Filename

4806847