DocumentCode
30654
Title
Hot Carrier Injection Stress Effect on a 65 nm LNA at 70 GHz
Author
Yuan, J.S. ; Xu, Yan ; Yen, S.D. ; Bi, Yaxin ; Hwang, G.W.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Volume
14
Issue
3
fYear
2014
fDate
Sept. 2014
Firstpage
931
Lastpage
934
Abstract
The hot carrier injection stress effect on a 65 nm low-noise amplifier at the 70 GHz range of operation has been studied. The experimental data show that the minimum noise figure increases ( ~2 dB) and the maximum small-signal power gain decreases (~3 dB) after 10 h of HCI overstress due to transconductance degradation as evidenced by 65 nm individual transistor measurement.
Keywords
circuit noise; hot carriers; low noise amplifiers; millimetre wave amplifiers; HCI overstress; LNA; frequency 70 GHz; hot carrier injection stress effect; individual transistor measurement; low-noise amplifier; maximum small-signal power gain; size 65 nm; time 10 h; transconductance degradation; Degradation; Hot carriers; Noise; Noise figure; Stress; Transconductance; Transistors; Hot electron; low noise amplifier; noise figure; radio frequency; small-signal power gain;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2014.2328496
Filename
6824176
Link To Document