DocumentCode
3065478
Title
Novel heterojunction bipolar transistors (HBTs) with significantly reduced emitter current crowding effect
Author
Wang, Y. ; Gu, W.D. ; Jiannong Wang ; Ge, Weikun ; Guanqun, Xia
Author_Institution
Phys. Dept, Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
1998
fDate
1998
Firstpage
583
Lastpage
586
Abstract
HBTs with integrated vertical ballasting resistors for improving the thermal stability and current handling capability have been fabricated. Both computer simulation and experimental results show that the performance of these transistors are very promising in microwave power and mobile communication applications
Keywords
heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; computer simulation; emitter current crowding; heterojunction bipolar transistor; microwave power device; mobile communication; thermal stability; vertical ballasting resistor; Electronic ballasts; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MODFETs; Negative feedback; Proximity effect; Resistors; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785954
Filename
785954
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