Title :
Novel heterojunction bipolar transistors (HBTs) with significantly reduced emitter current crowding effect
Author :
Wang, Y. ; Gu, W.D. ; Jiannong Wang ; Ge, Weikun ; Guanqun, Xia
Author_Institution :
Phys. Dept, Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
HBTs with integrated vertical ballasting resistors for improving the thermal stability and current handling capability have been fabricated. Both computer simulation and experimental results show that the performance of these transistors are very promising in microwave power and mobile communication applications
Keywords :
heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; computer simulation; emitter current crowding; heterojunction bipolar transistor; microwave power device; mobile communication; thermal stability; vertical ballasting resistor; Electronic ballasts; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MODFETs; Negative feedback; Proximity effect; Resistors; Temperature; Thermal resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785954
