DocumentCode
3065505
Title
Quantum resonant tunneling effect and multi-value logic memory
Author
Ruigang, Li ; Jiannong, Wang ; Yuqi, Wang ; Wenfu, Dong ; Dexin, Wu
Author_Institution
Lab. of Adv. Devices, Acad. Sinica, Beijing, China
fYear
1998
fDate
1998
Firstpage
588
Lastpage
589
Abstract
A novel fabrication process, based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs, AlAs/InAs/GaAs quantum dots double barrier quantum well sub-micron resonant tunneling diodes (RTD), and the peak to valley current ratio could be over 20. A new model of multilevel logic SRAM with RTDs was proposed
Keywords
SRAM chips; etching; multivalued logic circuits; quantum well devices; resonant tunnelling diodes; semiconductor quantum dots; AlAs-GaAs; AlAs-InAs-GaAs; GaAs air bridge; double barrier quantum well resonant tunneling diode; fabrication; multi-value logic quantum SRAM; peak to valley current ratio; quantum dot; selective wet etching; Diodes; Fabrication; Gallium arsenide; Logic devices; Multivalued logic; Quantum dots; Random access memory; Resonance; Resonant tunneling devices; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785956
Filename
785956
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