• DocumentCode
    3065523
  • Title

    Nonlinear modeling of 4 W 12 mm multi-cell microwave power GaAs MESFET

  • Author

    Gu, Cong ; Qian, Gang ; Liu, Youbao

  • Author_Institution
    Graduate Dept., Shaanxi Lishan Microelectron. Inst., Xi´´an, China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    590
  • Lastpage
    593
  • Abstract
    Based on the proposed many models for GaAs MESFET, we put forth a newly modified large-signal model for 4 W 12 mm multi-cell microwave power GaAs MESFET in this paper. The newly improved model presented here includes the analytical expressions of Ids(Vgs, V ds) elements operating at microwave frequency in large signal. Also comparison with three kinds of the original formula proposed by Materka, Jastrzebski and Curtice, we found that the modified Ids in here is more accuracy
  • Keywords
    III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; 12 mm; 4 W; GaAs; large-signal characteristics; multi-cell microwave power GaAs MESFET; nonlinear model; Capacitance; Gallium arsenide; MESFETs; Microelectronics; Microwave devices; Microwave theory and techniques; Semiconductor process modeling; Signal analysis; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785957
  • Filename
    785957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3065523