DocumentCode
3065590
Title
Design consideration for planar doped barrier diodes´ dc characteristics
Author
Jie, Wu ; Fangmin, Guo ; Guanqun, Xia
Author_Institution
Inst. of Metall., Acad. Sinica, Shanghai, China
fYear
1998
fDate
1998
Firstpage
602
Lastpage
604
Abstract
By variation of the thickness and doping concentration of the p + and intrinsic regions, the barrier height and asymmetry of the structure can be independently varied. A model is developed to investigate the extent to which the above factors may affect the PDBDs´ dc characteristics
Keywords
semiconductor device models; semiconductor diodes; DC characteristics; design; model; planar doped barrier diode; Detectors; Gallium arsenide; Schottky barriers; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Semiconductor process modeling; Space charge; Thickness control; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785960
Filename
785960
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