Optical properties of wide bandgap III-V nitride semiconductors

Author

Kolbas, R.M. ; Shmagin, I.K. ; Muth, J.F.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1998

fDate

1998

Firstpage

609

Lastpage

612

Abstract

Applications of III-V nitride materials, such as GaN, AlN, InN and their alloys include blue-green light emitting devices, solar blind photodetectors, and high power/frequency electronics. A number of unique and potentially useful optical phenomena have been observed in high quality thin films and heterostructures of AlGaN, GaN, and InGaN. These include: (1) persistent optical effects such as optical metastability in bulk GaN crystals; (2) tunable emission from InGaN quantum wells, (MQW) and; (3) reconfigurable optical properties in InGaN-GaN heterostructures

Keywords

III-V semiconductors; optical properties; quantum well lasers; semiconductor heterojunctions; semiconductor quantum wells; semiconductor superlattices; semiconductor thin films; wide band gap semiconductors; AlGaN; AlN; GaN; InGaN; InGaN quantum wells; InGaN-GaN; InGaN/GaN heterostructures; InN; MQW; blue-green light emitting devices; bulk GaN crystals; heterostructures; high power/frequency electronics; high quality thin films; optical metastability; optical phenomena; optical properties; persistent optical effects; reconfigurable optical properties; solar blind photodetectors; tunable emission; wide bandgap III-V nitride semiconductors; Aluminum gallium nitride; Frequency; Gallium nitride; III-V semiconductor materials; Optical films; Optical materials; Photodetectors; Photonic band gap; Semiconductor thin films; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785963

Filename

785963