High performance InGaAs/InGaAsP strained quantum well lasers with AlGaAs cladding layers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum well lasers with broad waveguide InGaAsP and AlGaAs cladding layers. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n⁺-GaAs substrate. The lasers exhibit a high internal quantum efficiency of 93% and a low internal loss of 1.8 cm^-1. For 100 μm broad stripe coated lasers with 800 μm, a threshold current density of 190 A/cm², a high slope efficiency of 1.03 W/A and a far-field pattern of 38×6° are obtained. We also fabricated 3 μm-stripe ridge waveguide lasers. Their threshold current is 30 mA, and the output power operating in fundamental mode is more then 180 mW