Title :
Study of the optical and electrical properties of InGaAs quantum well lasers with carbon doped cladding layer
Author :
Tao, Changbao ; Gao, Guo ; Chen, Changhua ; Xu Zuntu ; Lian, Peng ; Tao Changbao ; Zhao, Hongdong ; Du Jinyu ; Zou, Desu ; Chen, Jianxin ; Shen, Guangdi
Author_Institution :
Dept. of Electr. Eng., Beijing Polytech. Univ., China
Abstract :
The optical and electrical properties of carbon doped AlGaAs/GaAs/InGaAs strained quantum well (QW) lasers grown by metalorganic chemical vapor deposition (MOCVD) have been studied. During annealing at the different conditions, the samples exhibit some changes in the photoluminescence (PL) characteristics, the intensity of the PL spectrum will be elevated. The current-voltage (I-V) characteristics of InGaAs strained lasers doped with carbon and zinc are measured at the same injection current densities to study the electrical properties of carbon doped lasers
Keywords :
III-V semiconductors; aluminium compounds; annealing; carbon; charge injection; claddings; current density; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; spectral line intensity; AlGaAs-GaAs-InGaAs:C; InGaAs quantum well lasers; InGaAs strained lasers; MOCVD; PL spectrum; QW lasers; annealing; carbon doped AlGaAs/GaAs/InGaAs strained quantum well lasers; carbon doped cladding layer; current-voltage characteristics; electrical properties; injection current densities; intensity; metalorganic chemical vapor deposition; optical properties; photoluminescence; zinc; Annealing; Chemical lasers; Chemical vapor deposition; Density measurement; Gallium arsenide; Indium gallium arsenide; MOCVD; Photoluminescence; Quantum well lasers; Zinc;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785968
