Title :
Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors
Author :
Borgarino, M. ; Bary, L. ; Kuchenbecker, J. ; Tartarin, J.G. ; Lafontaine, H. ; Kovacic, T. ; Plana, R. ; Graffeuil, J. ; Fantini, F.
Author_Institution :
Dipartimento di Scu dell´´Ingegneria, Modena Univ., Italy
Abstract :
In this paper the effects of hot carrier on the correlation resistance in SiGe HBT´s are investigated. Before the stress the correlation resistance was found to be comparable with the access series resistance while, after the stress, the correlation resistance decreases and the access series resistance increases. This increase suggests that the stress degrades the access regions of the transistor. On the other hand, the observed behaviour of the correlation resistance is explained in terms of an intrinsic noise source, Π-topology based low frequency noise model. It is shown that the correlation resistance is a useful indicator of surface recombination mechanisms. In particular, one intrinsic noise source in the model is associated with the degradation of the extrinsic base surface around the emitter perimeter
Keywords :
Ge-Si alloys; electric resistance; elemental semiconductors; equivalent circuits; heterojunction bipolar transistors; hot carriers; microwave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; silicon; surface recombination; Π-topology based LF noise model; Si-SiGe; Si/SiGe HBTs; access series resistance; correlation resistance; heterojunction bipolar transistors; hot carrier effects; intrinsic noise source; low frequency noise model; surface recombination mechanisms; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carrier effects; Low-frequency noise; Noise figure; Noise generators; Silicon germanium; Stress; Surface resistance;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919018
