Title :
Si/SiGe IC´s with low cost in the 15 to 20 GHz range
Author :
Teppo, T. ; Sönmez, E. ; Schad, K.-B. ; Abele, P. ; Schumacher, H.
Author_Institution :
Dept. of Electron. devices & Circuits, Ulm Univ., Germany
Abstract :
Today silicon germanium heterojunction bipolar transistor (SiGe HBT) technology is frequently used commercially in the S- and C-bands. It is convenient for low- and medium-power applications where considerable integration density and low power consumption are needed. The low cost and high maturity of the silicon process which the Si-SiGe HBT process is based on makes it an attractive choice for higher frequencies also. We demonstrate that with small changes of the standard process, IC operation up to 20 GHz is achievable. A low noise amplifier, a compact oscillator and a low power mixer are described in more detail
Keywords :
Ge-Si alloys; MMIC amplifiers; MMIC mixers; MMIC oscillators; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; integrated circuit noise; low-power electronics; semiconductor materials; silicon; 15 to 20 GHz; LNA; Si-SiGe; Si/SiGe HBT process; Si/SiGe ICs; SiGe HBT technology; compact oscillator; heterojunction bipolar transistor; low noise amplifier; low power mixer; Circuits; Costs; Doping; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Silicon germanium; Substrates;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919022
