Title :
Effect of deep traps on the low-frequency capacitance-voltage characteristic of selectively doped AlxGa1-xAs/GaAs heterostructures
Author :
Gorev, N.B. ; Kodzespirova, I.F. ; Kostylev, S.A. ; Kovalenko, Yu.A. ; Prokhorov, E.F.
Author_Institution :
Inst. of Tech. Mech., Acad. of Sci., Ukraine
Abstract :
The low-frequency capacitance-voltage characteristic of a selectively doped Al1-xGaxAs/GaAs heterostructure layer is calculated. It is shown that the presence of deep traps in the Al1-xGaxAs layer modifies the dependence C(-V) qualitatively, namely, causes it to feature a rising portion, which is due to the onset of emptying of the deep traps when the Fermi level comes close to the trap energy level. This enabled us to obtain an expression for determining the trap depth from the low-frequency capacitance-voltage characteristic
Keywords :
Fermi level; III-V semiconductors; aluminium compounds; deep levels; electronic density of states; gallium arsenide; semiconductor heterojunctions; AlGaAs-GaAs; Fermi level; deep traps; density of states; low-frequency capacitance-voltage characteristics; selectively doped heterostructure; trap depth; Artificial intelligence; Capacitance-voltage characteristics; Electron traps; Gallium arsenide; HEMTs; Ionization; MODFETs; Permittivity; Schottky barriers; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785976
