Title :
Metal gate strained silicon MOSFETs for microwave integrated circuits
Author :
Ternent, G. ; Edger, D.L. ; McLelland, H. ; Williamson, F. ; Ferguson, S. ; Kaya, S. ; Wilkinson, C.D.W. ; Thayne, I.G. ; Fobelets, K. ; Hampson, J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
In this work a III-V MODFET fabrication process has been adapted to fabricate metal gate silicon based MOSFETs. A range of MOSFETs with gate lengths varying from 1 μm to 120 nm were fabricated and all showed good transistor action. The gate metal was Ti/Pd/Au 200 nm thick and both pyramidal and T shaped gates were fabricated. The parasitic gate-source capacitance was reduced by using a spin on dielectric. The strained silicon MOSFETs with rectangular 0.3 μm Ti/Pd/Au gates had measured fT and fmax, of 11 GHz and 12 GHz respectively. By de-embedding the parasitic pad capacitance the intrinsic fT and fmax are 20 GHz and 21 GHz
Keywords :
MOS integrated circuits; MOSFET; capacitance; elemental semiconductors; field effect MMIC; gold; microwave field effect transistors; palladium; semiconductor device metallisation; silicon; titanium; 0.3 micron; 11 to 21 GHz; 120 nm to 1 micron; 200 nm; III-V MODFET fabrication process adaption; Si; T-shaped gates; Ti-Pd-Au; Ti/Pd/Au gate metal; metal gate strained Si MOSFETs; monolithic microwave ICs; parasitic gate-source capacitance reduction; parasitic pad capacitance de-embedding; pyramidal shaped gates; spin on dielectric; Dielectrics; Fabrication; Gold; HEMTs; III-V semiconductor materials; MODFETs; MOSFETs; Microwave transistors; Parasitic capacitance; Silicon;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919024
