DocumentCode :
3066004
Title :
Effects of current-dependent and frequency-dependent gain suppression on the nonlinear dynamics of semiconductor lasers
Author :
Lim, C.G. ; Iezekiel, S. ; Snowden, C.M.
Author_Institution :
Inst. of Microwave & Photonics, Leeds Univ., UK
fYear :
2000
fDate :
2000
Firstpage :
51
Lastpage :
54
Abstract :
By taking the current and frequency-dependence of the nonlinear gain suppression factor into account, improved agreement between single-mode rate equations simulations and measured results for the nonlinear dynamics of a 1.55 μm InGaAsP laser diode is obtained
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; laser transitions; semiconductor lasers; 1.55 micron; InGaAsP; InGaAsP laser diode; current-dependent gain suppression; frequency-dependent gain suppression; nonlinear dynamics; nonlinear gain suppression factor; semiconductor lasers; single-mode rate equations simulations; Bifurcation; Charge carrier density; Current measurement; Diode lasers; Frequency measurement; Frequency modulation; Masers; Nonlinear equations; Optical modulation; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
Type :
conf
DOI :
10.1109/EDMO.2000.919028
Filename :
919028
Link To Document :
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