Material and device issues of GaN-based HEMTs

Author

Kordos, P. ; Alam, A. ; Betko, J. ; Chow, P.P. ; Heuken, M. ; Javorka, P. ; Kocan, M. ; Marso, M. ; Morvic, M. ; Van Hove, J.M.

Author_Institution

Julich Res. Centre, Inst. of Thin Film & Ion Technol., Germany

fYear

2000

fDate

2000

Firstpage

61

Lastpage

66

Abstract

Material structure and device processing issues related to the performance of high-frequency and high-power AlGaN-GaN HEMTs are discussed. Results on selected issues like transport properties of highly resistive buffer layers, persistent photoconductivity in 2DEG structures, preparation and properties of ohmic and Schottky-barrier contacts and HEMT devices, as well as analysis of deep traps in HEMTs are addressed in this paper in detail

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; microwave field effect transistors; ohmic contacts; photoconductivity; power HEMT; two-dimensional electron gas; wide band gap semiconductors; 2DEG structures; AlGaN-GaN; AlGaN/GaN HEMTs; GaN-based HEMTs; Schottky-barrier contacts; deep traps; device processing; high-frequency HEMTs; high-power HEMTs; highly resistive buffer layers; material structure; ohmic contacts; persistent photoconductivity; transport properties; Aluminum gallium nitride; Buffer layers; Conductivity; Gallium nitride; HEMTs; Hall effect; MOCVD; MODFETs; Photoconducting materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919030

Filename

919030