DocumentCode
3066081
Title
Suppression of instabilities in 4H-SiC microwave MESFETs
Author
Hilton, K.P. ; Uren, M.J. ; Hayes, D.G. ; Wilding, P.J. ; Smith, B.H.
Author_Institution
Defence Evaluation & Res. Agency, Great Malvern, UK
fYear
2000
fDate
2000
Firstpage
67
Lastpage
70
Abstract
SiC MESFETs can be susceptible to trapping induced instabilities which reduce the performance of the device at CW compared to pulsed operation. We show that surface passivation and the use of a gate recess can dramatically reduce the scale of the problem
Keywords
Schottky gate field effect transistors; microwave field effect transistors; passivation; silicon compounds; stability; wide band gap semiconductors; 4H-SiC microwave MESFETs; SiC; gate recess; instabilities suppression; surface passivation; trapping induced instabilities; Dispersion; MESFETs; MOSFETs; Microwave devices; Oxidation; Passivation; Pulse measurements; Radio frequency; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location
Glasgow
Print_ISBN
0-7803-6550-X
Type
conf
DOI
10.1109/EDMO.2000.919031
Filename
919031
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