Title :
Nondestructive inspection of SiGe films using laser terahertz emission microscopy
Author :
Nakamura, A. ; Omura, K. ; Sakai, Kenji ; Kiwa, Toshihiko ; Tsukada, Keiji
Author_Institution :
Grad. Sch. of Natural Sci. & Technol., Okayama Univ., Okayama, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Laser terahertz emission microscopy was applied to investigate the SiGe film on the Si substrate. In this study, as the initial experiment to apply LTEM to non-destructive evaluation of the strained SiGe films, the THz emission properties of the strained-SiGe were measured.
Keywords :
Ge-Si alloys; elemental semiconductors; measurement by laser beam; microscopy; nondestructive testing; terahertz wave imaging; terahertz wave spectra; LTEM; SiGe; THz emission properties; laser terahertz emission microscopy; nondestructive inspection; strained SiGe films; Films; Laser theory; Measurement by laser beam; Microscopy; Silicon; Silicon germanium;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600524
