DocumentCode
3066171
Title
Physical modeling of transient enhanced diffusion in silicon
Author
Taniguchi, Kazuhiro ; Saito, Takashi ; Xia, Jun ; Kim, Ryan
Author_Institution
Dept. of Electr. & Inf. Syst., Osaka Univ.
fYear
1999
fDate
1999
Firstpage
23
Lastpage
26
Abstract
Transient enhanced diffusion (TED) of boron atoms in superlattice Si wafers during thermal annealing were simulated using a comprehensive diffusion model. It was found that the model well predicts boron atoms segregate to (311) defects during thermal annealing and normal TED as well
Keywords
annealing; boron; diffusion; elemental semiconductors; segregation; semiconductor process modelling; silicon; Si:B; boron dopant; defect; numerical simulation; physical model; segregation; silicon superlattice wafer; thermal annealing; transient enhanced diffusion; Annealing; Boron; Diffusion processes; Equations; Lattices; Microscopy; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-5620-9
Type
conf
DOI
10.1109/VTSA.1999.785990
Filename
785990
Link To Document