Title :
Physical modeling of transient enhanced diffusion in silicon
Author :
Taniguchi, Kazuhiro ; Saito, Takashi ; Xia, Jun ; Kim, Ryan
Author_Institution :
Dept. of Electr. & Inf. Syst., Osaka Univ.
Abstract :
Transient enhanced diffusion (TED) of boron atoms in superlattice Si wafers during thermal annealing were simulated using a comprehensive diffusion model. It was found that the model well predicts boron atoms segregate to (311) defects during thermal annealing and normal TED as well
Keywords :
annealing; boron; diffusion; elemental semiconductors; segregation; semiconductor process modelling; silicon; Si:B; boron dopant; defect; numerical simulation; physical model; segregation; silicon superlattice wafer; thermal annealing; transient enhanced diffusion; Annealing; Boron; Diffusion processes; Equations; Lattices; Microscopy; Silicon;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.785990
