Title :
Microwave characteristics of meander inductors fabricated by 3D self-assembly
Author :
Dahimann, G.W. ; Yeatman, Eric M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
A new self-assembly process is presented which allows the fabrication of 3-dimensional metal structures in a fully parallel low temperature process. The fabrication method is suitable as a post-process so as to integrate inductors on radio- and microwave frequency ICs, with the aim of reducing losses and parasitic capacitance by separating the coil from the substrate. Meandered microwave inductors have been fabricated on a low resistivity silicon substrate, and a peak Q of 11 was measured for a 2 nH inductor, compared to a peak Q of 4 for the same structure in proximity to the substrate
Keywords :
Q-factor; inductors; microwave integrated circuits; self-assembly; Q-factor; Si; fabrication; loss; meander inductor; microwave IC; microwave characteristics; parallel low temperature process; parasitic capacitance; radiofrequency IC; self-assembly; silicon substrate; three-dimensional metal structure; Coils; Conductivity; Fabrication; Inductors; Microwave frequencies; Parasitic capacitance; Q measurement; Self-assembly; Silicon; Temperature;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919045
