Title :
Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3 -nitrided Si
Author :
Song, S.C. ; Luan, H.F. ; Lee, C.-H. ; Mao, A.Y. ; Lee, S.J. ; Gelpey, J. ; Marcus, S. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH3 nitridation of Si followed by in-situ N2O oxidation (NH3+N2 O process). These films show excellent interface properties, significant lower leakage current (~102×), enhanced reliability, and superior boron diffusion barrier properties compared with SiO2 of identical thickness
Keywords :
MOS capacitors; MOSFET; dielectric thin films; diffusion barriers; electric breakdown; interface states; leakage currents; nitridation; oxidation; rapid thermal processing; reliability; silicon compounds; 10 s; 15 to 30 s; 20 to 22 angstrom; 700 to 800 C; 800 to 950 C; B diffusion barrier properties; N2O; NH3; NH3+N2O process; Si; Si3N4-SiO2; Si3N4/SiO2 ultra thin gate dielectrics; TDDB; in-situ rapid thermal N2O oxidation; interface properties; leakage current; poly NMOS devices; poly PMOS devices; rapid thermal NH3 nitridation; reliability; ultra thin high quality nitride/oxide gate dielectrics; Boron; Capacitance-voltage characteristics; Capacitors; Dielectrics; Interface states; MOS devices; Nitrogen; Oxidation; Semiconductor films; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786004
