Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses

A simple model and conversion scheme is proposed to correlate Q _BD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although Q_BD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35 Å to 135 Å oxides demonstrate the capability of the proposed method