First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

Author

Chen, Y. ; Lodhi, T. ; McLelland, H. ; Edgar, D.L. ; Macintyre, D. ; Thoms, S. ; Stanley, C.R. ; Thayne, I.G.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2000

fDate

2000

Firstpage

202

Lastpage

205

Abstract

We report the first lattice matched InP HEMTs fabricated using a T-gate process based on a bilayer of Shipley UVIII DUV resist and PMMA. A DC gate resistance of 220 Ω/mm was achieved, leading to f_T of 193 GHz and Maximum Available Gain (MAG) values of 13 dB at 94 GHz for 100 μm wide devices

Keywords

III-V semiconductors; aluminium compounds; electron resists; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 13 dB; 193 GHz; 94 GHz; DC gate resistance; InAlAs-InGaAs; InAlAs/InGaAs HEMT; PMMA resist; Shipley UVIII DUV resist; T-gate fabrication; bilayer resist; cutoff frequency; electron beam lithography; lattice matched growth; maximum available gain; millimetre-wave characteristics; Electrical resistance measurement; Electron beams; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919059

Filename

919059