Title :
Spectroscopic Anisotropy Micro-Ellipsometry (SAME) for determination of lateral and vertical dimensions of sub-micron lithographic structures
Author :
Michaelis, A. ; Gent, O. ; Mantz, U.
Author_Institution :
Siemens Microelectron., Hopewell Junction, NY, USA
Abstract :
A new metrology tool, Spectroscopic Anisotropy Micro-Ellipsometry (SAME) is introduced. The method allows for a rapid and precise measurement of lateral and vertical feature sizes of periodic structures showing form birefringence. Examples of CD (critical dimensions), taper angle as well as overlay rotation measurements for gigabit generation DRAM structures are presented
Keywords :
DRAM chips; angular measurement; birefringence; ellipsometry; integrated circuit measurement; lithography; periodic structures; size measurement; SAME; critical dimensions; deep trench capacitor structures; form birefringence; gigabit generation DRAM structures; lateral dimensions; lateral feature sizes; metrology tool; overlay rotation measurements; periodic structures; spectroscopic anisotropy micro-ellipsometry; submicron lithographic structures; taper angle; vertical dimensions; vertical feature sizes; Anisotropic magnetoresistance; Birefringence; Dielectrics; Ellipsometry; Equations; Metrology; Periodic structures; Random access memory; Spectroscopy; Tensile stress;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786018
