Spectroscopic Anisotropy Micro-Ellipsometry (SAME) for determination of lateral and vertical dimensions of sub-micron lithographic structures

Author

Michaelis, A. ; Gent, O. ; Mantz, U.

Author_Institution

Siemens Microelectron., Hopewell Junction, NY, USA

fYear

1999

fDate

1999

Firstpage

131

Lastpage

134

Abstract

A new metrology tool, Spectroscopic Anisotropy Micro-Ellipsometry (SAME) is introduced. The method allows for a rapid and precise measurement of lateral and vertical feature sizes of periodic structures showing form birefringence. Examples of CD (critical dimensions), taper angle as well as overlay rotation measurements for gigabit generation DRAM structures are presented

Keywords

DRAM chips; angular measurement; birefringence; ellipsometry; integrated circuit measurement; lithography; periodic structures; size measurement; SAME; critical dimensions; deep trench capacitor structures; form birefringence; gigabit generation DRAM structures; lateral dimensions; lateral feature sizes; metrology tool; overlay rotation measurements; periodic structures; spectroscopic anisotropy micro-ellipsometry; submicron lithographic structures; taper angle; vertical dimensions; vertical feature sizes; Anisotropic magnetoresistance; Birefringence; Dielectrics; Ellipsometry; Equations; Metrology; Periodic structures; Random access memory; Spectroscopy; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1999. International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-5620-9

Type

conf

DOI

10.1109/VTSA.1999.786018

Filename

786018