• DocumentCode
    3067004
  • Title

    On the cell misalignment for multilevel storage FLASH E2PROM

  • Author

    Wang, Chih Hsin ; Hemming, Mark ; Klinger, Pavel ; Kordesch, Albert V. ; Liu, Chun-Mai ; Su, Ken

  • Author_Institution
    Inf. Storage Devices, San Jose, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    191
  • Lastpage
    194
  • Abstract
    This paper presents for the first time the manufacturing issues due to cell misalignment encountered in multilevel FLASH memories. Split gate memory cells in mirrored pairs show varied program efficiency upon less ideal alignment, where device with a shorter Lsg has a poorer efficiency. This misalignment adversely impacts the dynamic range of the storage levels
  • Keywords
    cellular arrays; flash memories; integrated circuit manufacture; multivalued logic; cell misalignment; dynamic range; manufacturing issues; mirrored pairs; multilevel storage FLASH E2PROM; program efficiency; split gate memory cells; storage levels; Current supplies; Dynamic range; Electric variables measurement; Flash memory; Flash memory cells; Mirrors; PROM; Pulp manufacturing; Split gate flash memory cells; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1999. International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-5620-9
  • Type

    conf

  • DOI
    10.1109/VTSA.1999.786032
  • Filename
    786032
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3067004