• DocumentCode
    3067163
  • Title

    Partial rank modulation for flash memories

  • Author

    Wang, Zhiying ; Bruck, Jehoshua

  • Author_Institution
    Electr. Eng. Dept., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2010
  • fDate
    13-18 June 2010
  • Firstpage
    864
  • Lastpage
    868
  • Abstract
    Rank modulation was recently proposed as an information representation for multilevel flash memories, using permutations or ranks of n flash cells. The current decoding process finds the cell with the i-th highest charge level at iteration i, for i = 1, 2, ..., n-1. Motivated by the need to reduce the number of such iterations, we consider k-partial permutations, where only the highest k cell levels are considered for information representation. We propose a generalization of Gray codes for k-partial permutations such that information is updated efficiently.
  • Keywords
    Gray codes; data structures; flash memories; flash memories; gray codes; information representation; k partial permutation; partial rank modulation; Acceleration; Costs; Flash memory; Hardware; Information representation; Iterative decoding; Reflective binary codes; Robustness; Sorting; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Theory Proceedings (ISIT), 2010 IEEE International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4244-7890-3
  • Electronic_ISBN
    978-1-4244-7891-0
  • Type

    conf

  • DOI
    10.1109/ISIT.2010.5513597
  • Filename
    5513597