DocumentCode
3067163
Title
Partial rank modulation for flash memories
Author
Wang, Zhiying ; Bruck, Jehoshua
Author_Institution
Electr. Eng. Dept., California Inst. of Technol., Pasadena, CA, USA
fYear
2010
fDate
13-18 June 2010
Firstpage
864
Lastpage
868
Abstract
Rank modulation was recently proposed as an information representation for multilevel flash memories, using permutations or ranks of n flash cells. The current decoding process finds the cell with the i-th highest charge level at iteration i, for i = 1, 2, ..., n-1. Motivated by the need to reduce the number of such iterations, we consider k-partial permutations, where only the highest k cell levels are considered for information representation. We propose a generalization of Gray codes for k-partial permutations such that information is updated efficiently.
Keywords
Gray codes; data structures; flash memories; flash memories; gray codes; information representation; k partial permutation; partial rank modulation; Acceleration; Costs; Flash memory; Hardware; Information representation; Iterative decoding; Reflective binary codes; Robustness; Sorting; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Theory Proceedings (ISIT), 2010 IEEE International Symposium on
Conference_Location
Austin, TX
Print_ISBN
978-1-4244-7890-3
Electronic_ISBN
978-1-4244-7891-0
Type
conf
DOI
10.1109/ISIT.2010.5513597
Filename
5513597
Link To Document