Title :
A new design for a 1280×1024 digital CMOS image sensor with enhanced sensitivity, dynamic range and FPN
Author :
Ho, Jih-Shin ; Chiang, Ming-Cheng ; Cheng, Han-Min ; Lin, Tzu-Ping ; Kao, Ming-Jer
Author_Institution :
Ind. Technol. Res. Inst., Electron. Res. & Service Organ., Taiwan
Abstract :
This paper reports a 1.3 M-pixel CMOS image sensor with 5 μm×5 μm pixel size fabricated with a standard 0.35 μm CMOS logic process. Three techniques have been applied to improve the chip performance: an N-well photodiode to increase the quantum efficiency for light of long wavelengths; two-stage integration to enhance the performance under high illumination conditions; and capacitor-coupled readout to suppress the column Fixed Pattern Noise (FPN). Random access in rows and downsampling in columns are applicable to both B/W and color sensors
Keywords :
CMOS digital integrated circuits; CMOS image sensors; digital readout; integrated circuit design; integrated circuit noise; sensitivity; 0.35 mum; 1.3 Mpixel; 1024 pixel; 1280 pixel; CMOS logic process; N-well photodiode; capacitor-coupled readout; color sensors; column FPN; digital CMOS image sensor; downsampling; dynamic range; enhanced sensitivity; fixed pattern noise; high illumination conditions; long wavelength light; pixel size; quantum efficiency; random access; two-stage integration; CMOS image sensors; CMOS logic circuits; CMOS process; Charge pumps; Decoding; Dynamic range; Lighting; Multiplexing; Photodiodes; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786043
