Title :
Embedded DRAM technology: past, present and future
Author :
Takato, H. ; Koike, H. ; Yoshida, T. ; Ishiuchi, H.
Author_Institution :
ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Issues and development trends with regard to embedded DRAM are reviewed with real implementations for 0.5 μm, 0.35 μm and 0.25 μm generations. Future directions of the embedded DRAM technologies, including MOSFET structure, memory cells, process cost and performance, are also discussed
Keywords :
CMOS memory circuits; MOSFET; embedded systems; reviews; technological forecasting; 0.25 to 0.5 mum; MOSFET structure; development trends; embedded DRAM technology; future trends; logic based MOSFET process; memory cells; performance; process cost; trench capacitor cell; Costs; Laboratories; Libraries; Logic circuits; Logic devices; MOSFET circuits; Merging; Random access memory; System performance; Ultra large scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786044
