• DocumentCode
    3067231
  • Title

    Embedded DRAM technology: past, present and future

  • Author

    Takato, H. ; Koike, H. ; Yoshida, T. ; Ishiuchi, H.

  • Author_Institution
    ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    239
  • Lastpage
    242
  • Abstract
    Issues and development trends with regard to embedded DRAM are reviewed with real implementations for 0.5 μm, 0.35 μm and 0.25 μm generations. Future directions of the embedded DRAM technologies, including MOSFET structure, memory cells, process cost and performance, are also discussed
  • Keywords
    CMOS memory circuits; MOSFET; embedded systems; reviews; technological forecasting; 0.25 to 0.5 mum; MOSFET structure; development trends; embedded DRAM technology; future trends; logic based MOSFET process; memory cells; performance; process cost; trench capacitor cell; Costs; Laboratories; Libraries; Logic circuits; Logic devices; MOSFET circuits; Merging; Random access memory; System performance; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1999. International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-5620-9
  • Type

    conf

  • DOI
    10.1109/VTSA.1999.786044
  • Filename
    786044
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3067231