DocumentCode
3067337
Title
Wafer metrology based on combined optical interferometry
Author
Kim, A. Young Gwang ; Seo, B. Yong Bum ; Joo, C. Ki-Nam
Author_Institution
Dept. of Photonic Eng., Chosun Univ., Gwangju, South Korea
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
In this presentation, we propose and verify a simple combined interferometer with low coherence scanning interferometry and spectrally-resolved interferometry using NIR SLD to measure both side surface and thickness profiles of a Si wafer at once.
Keywords
elemental semiconductors; light interferometry; silicon; NIR SLD; Si; low coherence scanning interferometry; optical interferometry; side surface profile; silicon wafer metrology; spectrally-resolved interferometry; thickness profile; Cameras; Optical interferometry; Optical surface waves; Semiconductor device measurement; Silicon; Thickness measurement; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600582
Filename
6600582
Link To Document